2SK246 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK246 Datasheet PDF : 4 Pages
| |||
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V
· High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
Unit
-50
V
10
mA
300
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
¾
¾ -1.0 nA
-50 ¾
¾
V
1.2
¾
14
mA
-0.7
¾ -6.0
V
1.5
¾
¾
mS
¾
9.0
¾
pF
¾
2.5
¾
pF
1
2003-03-25
Share Link: 