2SK2728 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK2728

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS

500

voltage

Gate to source breakdown V(BR)GSS

±30

voltage

Gate to source leak current IGSS

—

Zero gate voltege drain

I DSS

—

current

Gate to source cutoff voltage VGS(off)

2.5

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

8

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ

Max

—

—

—

—

—

±10

—

10

—

3.5

0.38 0.45

13

—

2150 —

630

—

100

—

38

—

10

—

13

—

35

—

120

—

100

—

65

—

1.0

—

380

—

2SK2728

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

nc

nc

nc

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VGS = ±25V, VDS = 0

VDS = 500 V, VGS = 0

ID = 1mA, VDS = 10V*1

ID = 9A, VGS = 10V*1

ID = 9A, VDS = 10V*1

VDS = 10V

VGS = 0

f = 1MHz

VDD = 400V

VGS = 10V

ID = 18A

VGS = 10V, ID = 9A

RL = 3.3Ω

ID = 18A, VGS = 0

IF = 18A, VGS = 0

diF/ dt = 100A/µs

3

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