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Part Name
Description
2SK2728 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2728
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2728 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
Pulse Test
16
12
I
D
= 18 A
8
10 A
4
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
2SK2728
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
V
GS
= 10 V, 15 V
0.2
0.1
1
2
5 10 20 50 100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
1.2
I
D
= 18 A
0.8
V
GS
= 10 V
0.4
10 A
5A
0
–40 0
40 80 120 160
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25
°
C
5
25
°
C
2
1
75
°
C
0.5
0.2
0.1
0.1 0.2
0.5 1 2
Drain Current
V
DS
= 10 V
Pulse Test
5 10 20 50
I
D
(A)
5
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