Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SK2728 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2728
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2728 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SK2728
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25
°
C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I
DR
(A)
5000
2000
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
10
V
GS
= 0
f = 1 MHz
Crss
5
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
V
DS
400
300
200
V
GS
16
V
DD
= 100 V
250 V
12
400 V
8
100
0
V
DD
= 400 V
250 V
100 V
4
I
D
= 18 A
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 10
µ
s, duty < 1 %
200
t
d(off)
100
tf
tr
50
t
d(on)
20
10
0.1 0.3 1 3 10 30 100
Drain Current I
D
(A)
6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]