2SK2735STL-E View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK2735STL-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2735(L), 2SK2735(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 20 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1029-0200

(Previous: ADE-208-543)

Rev.2.00

Sep 07, 2005

RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(L)-(2))

(Package name: DPAK(S))

4

4

D

G

12 3

1

23

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

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