2SK2735STL-E View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK2735STL-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2735(L), 2SK2735(S)

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Ratings

30

±20

20

80

20

20

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test Conditions

Drain to source breakdown voltage V(BR)DSS 30

—

—

V ID = 10 mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20

—

—

V IG = ±100 µA, VDS = 0

Gate to source leak current

IGSS

—

—

±10

µA VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

10

µA VDS = 30 V, VGS = 0

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

VGS(off)

1.0

—

2.0

V ID = 1 mA, VDS = 10 V

RDS(on)

—

20

28

mΩ ID = 10 A, VGS = 10 V*3

RDS(on)

—

35

50

mΩ ID = 10 A, VGS = 4 V*3

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8

16

—

S ID = 10 A, VDS = 10 V*3

Input capacitance

Ciss

—

750

—

pF VDS = 10 V, VGS = 0,

Output capacitance

Coss

—

520

—

pF f = 1 MHz

Reverse transfer capacitance

Crss

—

210

—

pF

Turn-on delay time

td(on)

—

16

—

Rise time

tr

—

225

—

Turn-off delay time

td(off)

—

85

—

Fall time

tf

—

90

—

Body to drain diode forward voltage VDF

—

1.0

—

ns ID = 10 A, VGS = 10 V,

ns RL = 1 Ω

ns

ns

V IF = 20 A, VGS = 0

diF/ dt = 50 A/ µs

Body to drain diode reverse recovery trr

time

Note: 3. Pulse test

—

40

—

V IF = 20 A, VGS = 0

diF/ dt = 50A/ µs

Rev.2.00 Sep 07, 2005 page 2 of 7

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