2SK2735S View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK2735S Datasheet PDF : 8 Pages
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2SK2735(L), 2SK2735(S)
Static Drain to Source on State
Resistance vs. Temperature
100
Pulse Test
80
60
VGS = 4 V
40
ID = 20 A
5, 10 A
20
5, 10, 20 A
10 V
0
–40
0
40 80 120 160
Case Temperature TC (°C)
1000
Body to Drain Diode Reverse
Recovery Time
300
100
30
10
3
1
0.1 0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
20
ID = 20 A
40
16
VDD = 5 V
10 V
30 VDS
25 V
12
VGS
20
8
10
VDD = 25 V
4
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
30
Tc = –25°C
10
25°C
75°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
5000
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
2000
1000
500
Ciss
Coss
200
Crss
100
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
tf
30
tr
td(off)
10
td(on)
3 VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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