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Part Name
Description
2SK2931 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2931 Datasheet PDF : 10 Pages
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2SK2931
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I
D
= 20 A
10 A
0.1
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V
GS
= 4 V
10
10 V
5
2
1
12
5 10 20 50 100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
I
D
= 20 A 10 A 5 A
24
V
GS
= 4 V
16
8
10 V
5, 10, 20 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V
DS
= 10 V
200
Pulse Test
100
50
Tc = –25 °C
20
10
25 °C
5
75 °C
2
1
0.5
0.1 0.3 1 3 10 30 100
Drain Current I
D
(A)
5
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