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Part Name
Description
2SK2935 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2935 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SK2935
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V
DSS
V
GSS
I
D
I
Note1
D(pulse)
I
DR
I
Note3
AP
E
Note3
AR
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Ratings
Unit
60
V
±
20
V
35
A
140
A
35
A
35
A
105
mJ
30
W
150
°
C
–55 to +150
°
C
2
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