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Part Name
Description
2SK2935 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2935 Datasheet PDF : 10 Pages
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2SK2935
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I
D
= 20A
0.4
10 A
0.2
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= 4 V
10 V
0.02
0.01
0.1
0.3 1 3
Drain Current
10 30 100
I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
20 A
0.04
V
GS
= 4 V
5,10 A
0.02
0
–40
5, 10,20 A
10 V
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
25 °C
10
75 °C
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I
D
(A)
5
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