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Part Name
Description
2SK2935 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2935 Datasheet PDF : 10 Pages
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2SK2935
Reverse Drain Current vs.
Source to Drain Voltage
50
40
10 V
30 5 V
20
V
GS
= 0, –5 V
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
125
I
AP
= 35 A
100
V
DD
= 25 V
duty < 0.1 %
Rg > 50
W
75
50
25
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V
DS
Monitor
Rg
50
W
L
I
AP
Monitor
D. U. T
V
DD
Avalanche Waveform
E
AR
=
1
2
• L • I
AP
2
•
V
DSS
V
DSS
– V
DD
I
AP
I
D
V
(BR)DSS
V
DS
V
DD
0
7
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