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Part Name
Description
2SK2936 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2936 Datasheet PDF : 10 Pages
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2SK2936
Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I
DR
(A)
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
200
Crss
100
V
GS
= 0
f = 1 MHz
50
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
20
I
D
= 45 A
80
60
V
DS
V
GS
16
V
DD
= 10 V
25 V
12
50 V
40
8
20
V
DD
= 50 V
4
25 V
10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
1000
500
Switching Characteristics
t
d(off)
200
tf
100
tr
50
t
d(on)
20
V
GS
= 10 V, V
DD
= 30 V
PW = 10 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I
D
(A)
6
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