2SK3111 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3111 Datasheet PDF : 8 Pages
| |||
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
350
300
ID = 20 A
250
200
ID = 10 A
150
100
50
0
−50
VGS = 10 V
Pulsed
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Ciss
100
Coss
VGS = 0 V
f = 1 MHz
10
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 50 A/ µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Current - A
2SK3111
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 10 V
0V
1
0.1
0.0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
1
0.1
VDD = 100 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
200
16
14
VDD = 160 V
VGS
150
100 V
12
40 V
10
100
8
6
50
4
VDS
2
ID = 20 A
0
0
0
10 20 30 40 50 60
QG - Gate Charge - nC
4
Data Sheet D13334EJ1V0DS00
Share Link: 