Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 25 A
VGS = 4 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
toff
Qg
Qgs
VDD ≈ 48 V, VGS = 10 V, ID = 45 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 45 A, VGS = 0 V
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SK2985
Min Typ. Max Unit
—
—
±10
µA
—
—
100
µA
60
—
—
V
40
—
—
1.3
—
2.5
V
—
4.5
5.8
mΩ
—
5.8
10
35
70
—
S
— 9300 —
—
910
—
pF
— 1435 —
—
18
—
—
50
—
ns
—
110
—
—
480
—
—
210
—
—
145
—
nC
—
65
—
Min Typ. Max Unit
—
—
45
A
—
—
180
A
—
— −1.5
V
—
60
—
ns
—
50
—
nC
2
2002-07-31