2SK2986 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK2986 Datasheet PDF : 6 Pages
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2SK2986
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2986
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 80 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
l Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (t≤10 s)
(Note 1)
Pulse (t≤1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
60
V
60
V
±20
V
55
70
A
280
100
W
525
mJ
55
A
10
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
1.25
°C / W
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 236 µH, IAR = 55 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2002-06-27
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