2SK3075 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3075 Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2SK3075
CHARACTERISTIC
Output Power
Drain Efficiency
Power Gain
Gate Threshold Voltage
Drain Cut-off Current
Gate-Source Leakage Current
SYMBOL
TEST CONDITION
PO
ηD
GP
Vth
IDSS
IGSS
VDS = 9.6V
Iidle = 50mA (VGS = adjust)
f = 520MHz, Pi = 500mW
VDS = 9.6V, ID = 0.5mA
VDS = 20V, VGS = 0
VGS = 10V, VDS = 0
MIN TYP. MAX UNIT
7.5
—
—
W
50
—
—
%
11.7 —
—
dB
1.0 1.5 2.0
V
—
—
10
μA
—
—
5
μA
HANDLING PRECAUTION
• When handling individual devices, be sure that working desks, human bodies and soldering iron are protected
against electrostatic electricity.
RF OUTPUT POWER TEST FIXTURE
2
2007-11-01
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