DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SK3326 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
2SK3326
NEC
NEC => Renesas Technology NEC
2SK3326 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3326
Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
16
14
12
EAS = 10.7 mJ
10
ID(peak) = IAS
RG = 25
VGS = 20 V 0 V
VDD = 150 V
8
6
4
2
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
Figure18. SINGLE AVALANCHE ENERGY vs
INDUCTIVE LOAD
100
IAS = 10 A
10
RG = 25
VDD = 150 V
VGS = 20 V 0 V
Starting Tch = 25 ˚C
EAS = 10.7 mJ
1
0.1
10 µ
100 µ
1m
L - Inductive Load - H
10 m
6
Data Sheet D14204EJ1V0DS00

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]