2SK3454 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3454 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3454
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3454 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3454
Isolated TO-220
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.63 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Built-in gate protection diode
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
250
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30
V
Drain Current(DC) (TC = 25°C)
Drain Current(pulse) Note1
ID(DC)
ID(pulse)
±7.0
A
±21
A
Total Power Dissipation (TA = 25°C) PT1
2.0
W
Total Power Dissipation (TC = 25°C) PT2
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current Note2
IAS
7.0
A
Single Avalanche Energy Note2
EAS
49
mJ
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω , VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14756EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP (K)
The mark 5 shows major revised points.
©
Printed in Japan
2000
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