2SK3454 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3454 Datasheet PDF : 8 Pages
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2SK3454
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Drain Leakage Current
IDSS
VDS = 250 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 4.0 A
VGS = 10 V, ID = 4.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
Td(on)
Tr
Td(off)
Tf
QG
QGS
QGD
VF(S-D)
Trr
Qrr
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 125 V, ID = 4.0 A
VGS(on) = 10 V
RG = 10 Ω
VDD = 200 V
VGS = 10 V
ID = 7.0 A
IF = 7.0 A, VGS = 0 V
IF = 7.0 A, VGS = 0 V
di/dt = 50 A/µs
MIN.
2.5
1.0
TYP.
0.5
400
110
55
11
18
32
15
18
3.5
10
1.0
250
1.0
MAX.
Unit
100
µA
±10
µA
4.5
V
S
0.63
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS(on) 90%
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14756EJ2V0DS
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