2SK3456-S View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3456-S Datasheet PDF : 8 Pages
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2SK3456
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
1.4
1.2
ID = 6.0 A
1.0
12 A
0.8
0.6
0.4
0.2
0
−50
VGS = 10 V
Pulsed
0
50
100
150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Ciss
100
Coss
10
1
VGS = 0 V
0.1 f = 1 MHz
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
tf
td(on)
td(off)
tr
1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
0.1
0.1
1
10
100
ID - Drain Current - A
10000
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
VDD = 400 V
250 V
125 V
400
12
10
VGS
8
6
200
4
VDS
2
ID = 12 A
0
0
0 5 10 15 20 25 30 35
QG - Gate Charge - nC
4
Data Sheet D14753EJ1V0DS
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