DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5.0
4.5
4.0
3.5
ID = 6.0 A
3.0
2.5
3.0 A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tf
tr
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
2SK3457
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
700
14
ID = 5.0 A
600
VDD = 450 V
12
300 V
500
150 V
10
400
8
300
VGS
6
200
4
100
0
0
VDS
5
10
15
20
QG - Gate Charge - nC
2
0
25
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
10
1
VGS = 10 V
0.1
0V
1000
100
0.01
0
0.5
1
1.5
VSD - Source to Drain Voltage - V
10
0.1
Data Sheet D14754EJ1V0DS
di/dt = 50 A/ µs
VGS = 0 V
1
10
100
IF - Drain Current - A
5