K3288 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
K3288 Datasheet PDF : 8 Pages
| |||
2SK3288
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA)
RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-803 (Z)
1st.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
Share Link: 