K3288 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

K3288

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3288

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

VDSS

30

Gate to source voltage

VGSS

±20

Drain current

ID

100

Drain peak current

I Note1

D(pulse)

400

Body-drain diode reverse drain current IDR

100

Channel dissipation

Pch Note 2

400

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Unit

V

V

mA

mA

mA

mW

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS 30

voltage

Gate to source breakdown V(BR)GSS ±20

voltage

Gate to source leak current IGSS

—

Zero gate voltege drain

I DSS

—

current

Gate to source cutoff voltage VGS(off)

1.3

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

55

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Note: 3. Pulse test

4. Marking is EN

Typ

—

—

—

—

—

2.7

4.7

85

3

8

1

100

300

1100

900

Max

—

—

±5

1

2.3

3.5

7.0

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

mS

pF

pF

pF

ns

ns

ns

ns

Test Conditions

ID = 100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 30 V, VGS = 0

ID = 10µA, VDS = 5 V

ID = 50 mA,VGS = 10 V Note 3

ID = 20 mA,VGS = 4 V Note 3

ID = 50 mA, VDS = 10 V Note 3

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 50 mA, VGS = 10 V

RL = 200 Ω

2

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