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Part Name
Description
K3288 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
K3288
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
K3288 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
2SK3288
Typical Capacitance vs.
Drain to Source Voltage
10
5
Coss
Ciss
2
1.0
Crss
0.5
0.2
V
GS
= 0
f = 1 MHz
0.1
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
10000
5000
Switching Characteristics
2000
1000
500
200
100
50
20
10
0.01
t
d(off)
tf
t
r t d(on)
V
GS
= 10 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
0.02
0.05
0.1
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
V
GS
= 0,-5V
0.3
0.2
10 V
0.1
5V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
5
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