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Part Name
Description
2SK3453 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3453
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3453 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3453
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
1.56°C/W
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
Safe operating area
100
Pulse width t
w
(S)
500
E
AS
– T
ch
30
ID max (pulsed)
*
10
ID max (continuous)
3
DC operation
Tc
=
25°C
1
1 ms
*
100
μ
s
*
0.3
0.1
*
Single nonrepetitive pulse
Tc
=
25°C
0.03
Curves must be derated linearly
with increase in temperature.
0.01
1
10
100
Drain-source voltage V
DS
(V)
1000
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
7.5 mH
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-09-29
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