2SK3376TV View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SK3376TV

Silicon N Channel Junction Type Field Effect Transistor

Toshiba 

2SK3376TV

For ECM

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376TV

• Application for Ultra-compact ECM

1.2±0.05

0.8±0.05

Unit: mm

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Symbol

Rating

Unit

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta = 25°C)

Junction Temperature

Storage temperature range

VGDO

IG

PD

Tj

Tstg

-20

V

10

mA

100

mW

125

°C

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

IDSS CLASSIFICATION

A-Rank 80 to 200µA

B-Rank 170 to 300µA

C-Rank 270 to 480µA

BK-Rank 150 to 350µA

1

2

3

VESM2

1.Drain

2.Source

3.Gate

JEDEC

-

JEITA

-

TOSHIBA

2-1H1A

Weight: 0.8mg (typ.)

Marking

3

□

Type Name

Top Gate

Lot Code

IDSS Classification Symbol

A :A-Rank

B :B-Rank , BK-Rank

C :C-Rank

Equivalent Circuit

D

G

S

Precaution

There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use

it as a terminal.

1

2007-11-01

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