2SK3566 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK3566 Datasheet PDF : 6 Pages
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2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
V
900
V
±30
V
2.5
A
7.5
40
W
216
mJ
2.5
A
4
mJ
150
°C
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
3
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2005-01-24
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