2SK3538 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3538 Datasheet PDF : 6 Pages
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2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3538
Switching Regulator, DC-DC Converter Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 7.0 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 500 V)
· Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
500
V
500
V
±30
V
8
A
32
65
W
312
mJ
8
A
6.5
mJ
150
°C
-55 to 150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
4
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.92
°C/W
1
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
2
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, IAR = 8 A, RG = 25 W
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-14
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