2SK3538 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3538 Datasheet PDF : 6 Pages
| |||
2SK3538
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
V (BR) GSS IG = ±10 mA, VDS = 0 V
±30
¾
¾
V
IDSS
VDS = 500 V, VS = 0 V
¾
¾
100
mA
V (BR) DSS ID = 10 mA, VGS = 0 V
500
¾
¾
V
Vth
VDS = 10 V, ID = 1 mA
2.0
¾
4.0
V
RDS (ON) VGS = 10 V, ID = 4 A
¾
0.75 0.85
W
|Yfs|
VDS = 10 V, ID = 4 A
3.5
7.0
¾
S
Ciss
¾ 1300 ¾
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
130
¾
pF
Coss
¾
400
¾
tr
VGS 10 V
0V
ID = 4 A
¾
26
¾
VOUT
ton
¾
45
¾
pF
tf
¾
40
¾
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 ms
¾
140
¾
Qg
VDD ≈ 400 V, VGS = 10 V,
Qgs
ID = 8 A
Qgd
¾
30
¾
¾
17
¾
nC
¾
13
¾
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
8
A
¾
¾
32
A
¾
¾
-1.7
V
¾ 1200 ¾
ns
¾
10
¾
mC
Marking
K3538
※
Type
※ Lot Number
Month
Year
(starting from alphabet A)
(last number of the christian era)
2
2003-02-14
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