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Part Name
Description
2SK3538 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3538 Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
Tc
=
25°C
Pulse test
8
I
D
– V
DS
15
6
5.25
10
5
6
4.75
4
4.5
2
4.25
VGS
=
4 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
2SK3538
20
16
15
12
8
I
D
– V
DS
6
10
5.5
Common source
Tc
=
25°C
Pulse test
5
4
4.5
VGS
=
4 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
20
Common source
VDS
=
20 V
Pulse test
16
I
D
– V
GS
12
8
Tc
= -
55°C
4
25
100
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
– V
GS
10
Common source
Tc
=
25°C
Pulse test
8
6
ID
=
8 A
4
4
2
2
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
ï
Y
fs
ï
– I
D
30
Common source
VDS
=
20 V
Pulse test
Tc
= -
55°C
10
100
25
5
3
1
0.5
0.3
1
3
10
30
Drain current I
D
(A)
R
DS (ON)
– I
D
3
Common source
Tc
=
25°C
Pulse test
1
0.5
VGS
=
10, 15 V
0.3
0.1
0.05
0.3
1
3
10
30
Drain current I
D
(A)
3
2003-02-14
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