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Part Name
Description
2SK3538 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3538 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
5
Common source
VGS
=
10 V
4
Pulse test
3
2
ID
=
8 A
4
1
2
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3538
30
Common source
Tc
=
25°C
10 Pulse test
I
DR
– V
DS
3
1
10
0.3
5
3
1
VGS
=
0,
-
1 V
0.1
0
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
Drain-source voltage V
DS
(V)
Capacitance – V
DS
5000
3000
1000
Ciss
500
300
100
Coss
50
Common source
30
VGS
=
0 V
f
=
1 MHz
Tc = 25°C
10
0.1
1
10
Drain-source voltage V
DS
(V)
Crss
100
V
th
– Tc
5
Common source
VDS
=
10 V
4
ID
=
1 mA
Pulse test
3
2
1
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
-
Tc
100
Common source
VDS
=
10 A
80
ID
=
1 mA
Pulse test
60
40
20
0
0
25
50
75
100
125
150
Case temperature Tc (°C)
Dynamic input/output characteristics
500
VDS
400
20
Common source
ID
=
8 A
Tc
=
25°C
Pulse test
16
300
200
100
0
0
VDD = 100 V
12
200
400
8
VGS
4
0
10
20
30
40
50
Total gate charge Q
g
(nC)
4
2003-02-14
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