2SK3564 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3564 Datasheet PDF : 3 Pages
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TENTATIVE
2SK3564
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
Switching Regulator Applications
unit：ｍｍ
• Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
1.1
1.1
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
Rating
900
900
±30
3
9
40
TBD
Unit
0.69±0.15
V
2.54±0.25
V
2.54±0.25
V
123
A
1. Gate
W
2. Drain
3. Source
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
Channel temperature
Tch
3
A
4.0
mJ
150
°C
JEDEC
―
Storage temperature range
Tstg
-55~150
°C
JEITA
―
Thermal Characteristics
TOSHIBA ―
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.0 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2003-02-14
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