2SK3511-Z View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3511-Z Datasheet PDF : 8 Pages
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2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
10 TYP.
4
4.8 MAX.
1.3±0.2
2) TO-262 (MP-25 Fin Cut)
10 TYP.
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4) TO-220SMD (MP-25Z) Note
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.7±0.2
2.54 TYP.
2.54 TYP0. .5R0T.8YRP.TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP0..50R.8TRYPT.YP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Note This Package is only produced in Japan.
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually
used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
Data Sheet D15617EJ1V0DS
7
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