2SK3634 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3634 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
Pulsed
1.4 VGS = 10 V
1.2
ID = 6 A
1
3A
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VDD = 100 V
VGS = 10 V
RG = 0 Ω
td(off)
10
tr
tf
td(on)
1
0.1
100
10
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = 0 V
1
0.1
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3634
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
C iss
f = 1 MHz
100
Coss
C rss
10
1
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240
12
ID = 6.0 A
220
200
10
180
VDD = 160 V
100 V
160
40 V
8
140
120
VGS
6
100
80
4
60
40
VDS
2
20
0
0
0 1 2 3 4 5 6 7 8 9 10
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 100 A/µs
100
10
1
0.1
1
10
100
IF – Diode Forward Current - A
Data Sheet D15936EJ2V0DS
5
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