2SK372 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK372 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant-Current
and Impedance Converter Applications
2SK372
Unit: mm
• High breakdown voltage: VGDS = −40 V
• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
• Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−40
V
10
mA
200
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = −30 V, VDS = 0
⎯
⎯ −1.0 nA
V (BR) GDS VDS = 0, IG = −100 μA
−40 ⎯
⎯
V
IDSS
VDS = 10 V, VGS = 0
(Note 1)
5.0
⎯
30
mA
VGS (OFF) VDS = 10 V, ID = 0.1 μA
−0.3
⎯
−1.2
V
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25
60
⎯
mS
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
75
⎯
pF
Crss
VDG = 10 V, ID = 0, f = 1 MHz
⎯
15
⎯
pF
RDS (ON) VDS = 10 mV, VGS = 0
(Note 2) ⎯
20
⎯
Ω
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Typical IDSS rating = 15 mA
1
2007-11-01
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