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Part Name
Description
2SK3758 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ )
Toshiba
2SK3758 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE
Tc
=
25°C
10,15
PULSE TEST
4
6
3
5.5
52.5
5
2
4.75
4.5
1
VGS
=
4 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
2SK3758
I
D
– V
DS
10
10,15
6
COMMON SOURCE
8
Tc
=
25°C
PULSE TEST
6
5.5
4
5
2
4.5
VGS
=
4 V
0
0
10
20
30
40
40
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
8
PULSE TEST
6
4
Tc
= −
55°C
2
100
25
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
16
PULSE TEST
12
ID
=
5 A
8
2.5
4
1.2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
Y
f s
– I
D
10
Tc
= −
55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
10
DRAIN CURRENT
D
I (A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
VGS
=
10 V
、
15V
0.1
0.1
1
10
DRAIN CURRENT
D
I (A)
3
2004-02-26
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