DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SK3798 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SK3798 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RDS (ON) – Tc
10
COMMON SOURCE
VGS = 10 V
PULSE TEST
8
6
ID = 4 A
1
4
2
2
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3798
IDR – VDS
10
COMMON SOURCE
5
Tc = 25°C
PULSE TEST
3
1
0.5
0.3
10
VGS = 0, 1 V
3
1
0.1
0
0.4
0.8
1.2
1.6
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
CAPACITANCE – VDS
Ciss
100
Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
3 5 10
Crss
30 50 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
VDS = 10 V
1
ID = 1 mA
PULSE TEST
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
VDS
300
VDD = 100 V
16
400
12
200
200
8
100
0
0
VGS
10
COMMON SOURCE
ID = 4 A
4
Tc = 25°C
PULSE TEST
0
20
30
40
TOTAL GATE CHARGE Qg (nC)
4
2009-09-29

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]