Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
10 V
VGS
0V
Turn-on time
ton
Switching time
Fall time
tf
ID = 4 A Output
VDD ≈ 400 V
Turn-off time
Total gate charge (Gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
toff
Duty ≤ 1%, tw = 10 μs
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
Qgd
2SK3799
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
900
—
—
V
2.0
—
4.0
V
—
1.0 1.3
Ω
3.5 6.0
—
S
— 2200 —
—
45
—
pF
— 190 —
—
25
—
—
65
—
ns
—
20
—
— 120 —
—
60
—
—
34
—
nC
—
26
—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V
dlDR / dt = 100 A / μs
Min Typ. Max Unit
—
—
8
A
—
—
24
A
—
— −1.7
V
— 1700 —
ns
—
23
—
μC
Marking
K3799
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-01-29