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Part Name
Description
2SK3846 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
Toshiba
2SK3846 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3846
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
10
μ
0.01
100
μ
Single pulse
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
5.0°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(s)
Safe operating area
1000
100 ID max (Pulse)
*
ID max (Continuous)
1 ms
*
10 ms
*
10
DC operation
Tc
=
25°C
1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
100
Drain
−
source voltage V
DS
(V)
E
AS
– T
ch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
0
V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
25 V, L
=
48
μ
H
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-09-27
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