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Part Name
Description
2SK3879 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3879
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Toshiba
2SK3879 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3879
R
DS (ON)
−
Tc
5
C
C
o
O
m
M
m
M
o
O
n
N
s
S
ou
O
r
U
c
R
e
CE
VGS
V
G
=
S
1
=
0
10
V
V
4
PU
P
L
u
S
l
E
se
TE
te
S
s
T
t
7
3
3
2
ID=1.5A
1
0
-80 -40
0
40
80
120 160
CASE TEMPERATURE Tc (°C)
I
DR
−
V
DS
10
C
C
O
o
M
m
M
m
O
o
N
n s
S
o
O
u
U
rc
R
e
CE
Tc
=
2
T
5
c
°
=
C
25℃
PUL
P
S
u
E
ls
T
e
E
t
S
e
T
st
1
0.1
0
3
10
VGS=0、-1V
1
-0.2 -0.4 -0.6 -0.8
-1
-1.2
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
10000
CAPACITANCE – V
DS
1000
Ciss
Coss
100
C
CO
om
M
m
MO
on
N
s
S
o
O
u
U
rc
R
e
CE
V
VG
GS
S
=0
=
V
0 V
f
f
=
=
1
1
M
M
H
H
z
z
T
Tc
c=
=
2
2
5
5
℃
°C
Crss
10
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
−
Tc
5
4
3
2
COMMON SOURCE
Common source
1
VDS
=
10 V
V
DS
=10V
ID
=
1
I
m
D=
A
1mA
PULS
P
E
ul
T
s
E
e
S
t
T
est
0
-80
-40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
120
100
80
60
40
20
0
0
P
D
−
Tc
40
80
120
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
20
400
V
DS
16
VDD=100V
300
200V
12
200
400V
8
C
C
O
o
M
m
M
m
O
o
N
n
S
s
O
o
U
ur
R
c
C
e
E
ID
ID
=
=
6
6
.
.
5
5A
100
Tc
T
=
c=
2
2
5
5
°C
℃
4
Pulse test
PULSE TEST
0
0
160
0
20
40
60
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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