K3707 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

K3707

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK3707

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=100V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=10A

ID=10A, VGS=10V

ID=10A, VGS=4V

VDS=20V, f=1MHz

See Fig.2

VDS=50V, VGS=10V, ID=20A

IS=20A, VGS=0V

Ratings

Unit

min

typ

max

100

V

1

μA

±10

μA

1.2

2.6

V

11

17

S

45

60 mΩ

56

80 mΩ

2150

pF

160

pF

110

pF

19.5

ns

30

ns

185

ns

60

ns

44

nC

7.8

nC

9.8

nC

0.95

1.2

V

Fig.1 Avalanche Resistance Test Circuit

Fig.2 Switching Time Test Circuit

L

≥50Ω

RG

VIN

10V

0V

VIN

VDD=50V

ID=10A

RL=5Ω

10V

0V

50Ω

2SK3707

VDD

D

PW=10μs

D.C.≤1%

G

VOUT

2SK3707

P.G

50Ω

S

Ordering Information

Device

2SK3707-1E

Package

TO-220F-3SG

Shipping

50pcs./magazine

memo

Pb Free

No.7706-2/7

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