2SK3719 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

2SK3719

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

NEC => Renesas Technology 

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK3719

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

The 2SK3719 is suitable for converter of ECM.



FEATURES

• High gain

−0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

• Low noise

−109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

• Super thin thickness package

t = 0.37 mm TYP.

PACKAGE DRAWING (Unit: mm)

0.3 ±0.05

0.13

+0.1

–0.05

3

0 to 0.05

2

1

0.45 0.45

1.4 ±0.1

MAX. 0.4

ORDERING INFORMATION

PART NUMBER



2SK3719

PACKAGE

3pXSOF (0814)

0.2

+0.1

–0

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ABSOLUTE MAXIMUM RATINGS (TA = 25°C)



Drain to Source Voltage (VGS = −1.0 V)

VDSX

20

V

Gate to Drain Voltage

VGDO

−20

V

Drain Current

ID

10

mA

Gate Current

IG

10

mA

Total Power Dissipation

PT

100

mW

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg −55 to +125 °C

EQUIVALENT CIRCUIT

2

3

1

1: Source

2: Drain

3: Gate

Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16787EJ2V0DS00 (2nd edition)

Date Published April 2004 NS CP(K)

Printed in Japan

The mark  shows major revised points.

2003

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