2SK3719BF View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

2SK3719BF

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

NEC => Renesas Technology 

2SK3719

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Cut-off Current

IDSS

VDS = 2.0 V, VGS = 0 V

90

250 430

µA

Gate Cut-off Voltage

VGS(off) VDS = 2.0 V, ID = 1.0 µA

−0.37 −1.0

V

Forward Transfer Admittance

| yfs1 | VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz

320

470

µS

| yfs2 | VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz

800 1600

µS

Input Capacitance

Voltage Gain

Noise Voltage

Ciss

VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz

4.0

pF

GV

VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,

−0.5

dB

VIN = 10 mV, f = 1 kHz

NV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,

−109

dB

A-curve

IDSS CLASSIFICATION

MARKING

IDSS (µA)

BE

90 to 180



GAIN TEST CIRCUIT

VDD

RL

Out

BF

150 to 240

BH

210 to 350

BJ

320 to 430

C

NOISE VOLTAGE TEST CIRCUIT

VDD

RL

JIS A

NV (r.m.s)

C

2

Data Sheet D16787EJ2V0DS

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