2SK3793 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SK3793 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
250
Pulsed
200
150
VGS = 4.5 V
10 V
100
50
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
10
td(on)
tr
tf
1
0.1
100
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
10
VGS = 10 V
4.5 V
0V
1
0.1
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3793
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
10
0.001
0.1
Crss
10
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
120
12
ID = 12 A
100
10
VDD = 80 V
80
50 V
8
20 V
60
6
40
20
0
0
VGS
VDS
5
10
15
20
QG - Gate Charge - nC
4
2
0
25
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt =100 A/µs
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16777EJ1V0DS
5
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