2SK3899 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

2SK3899

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK3899

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

Gate Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 42 A

VGS = 10 V, ID = 42 A

RDS(on)2 VGS = 4.5 V, ID = 42 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 30 V, ID = 42 A

Rise Time

Turn-off Delay Time

tr

td(off)

VGS = 10 V

RG = 0 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 48 V

Gate to Source Charge

QGS

VGS = 10 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 84 A

IF = 84 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 84 A, VGS = 0 V

Qrr

di/dt = 100 A/µs

Note Pulsed

MIN.

1.5

35

TYP.

2.0

70

4.2

4.9

5500

1050

350

19

13

91

10

96

18

23.5

0.92

49

70

MAX.

10

±10

2.5

5.3

6.5

1.5

UNIT

µA

µA

V

S

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDD

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS

90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D17174EJ1V0DS

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