DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SK3899-ZK View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
2SK3899-ZK
NEC
NEC => Renesas Technology NEC
2SK3899-ZK Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
8
VGS = 4.5 V
6
10 V
4
2
0
-75
ID = 42 A
Puls ed
-25
25
75 125 175
Tch - Channel Temperature - °C
2SK3899
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
C iss
1000
C oss
100
C rss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
td(off)
100
10
VDD = 30 V
VGS(on) = 10 V
RG = 0
1
0.1
1
td(on)
tr
tf
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
Puls ed
0.01
0.0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
VDD = 48V
ID = 84 A
50
30V
10
12V
40
8
30
VGS
6
20
4
10
0
0
VDS
20
40
60
80
QG - Gate Charge - nC
2
0
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D17174EJ1V0DS
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]