2SK3693-01MR View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
2SK3693-01MR Datasheet PDF : 4 Pages
| |||
2SK3693-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
max.
5.0
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
Ciss
10-1
Coss
10-2
Crss
10-3
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
103
tf
102
td(off)
td(on)
101
tr
100
10-1
100
101
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25°C
14
12
Vcc= 90V
225V
10
360V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=45V
600 AS
I =7A
AS
500
400
I =11A
AS
300
I =17A
AS
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
3
Share Link: 