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2SK4017 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SK4017
Toshiba
Toshiba Toshiba
2SK4017 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
2SK4017
Min Typ. Max Unit
±10
μA
— 100 μA
60
V
1.3
2.5
V
— 0.09 0.15
Ω
— 0.07 0.10
3.0 6.0
S
— 730 —
60
pF
95
10
Turnon time
ton
Switching time
Fall time
tf
20
ns
4
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff
Qg
Qgs
VDD 48 V, VGS = 10 V, ID = 5 A
Qgd
35
15
11
nC
4
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
5
A
20
A
1.7
V
34
ns
28
μC
Marking
K4017
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20

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