2SK3891-01R View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3891-01R Datasheet PDF : 4 Pages
| |||
2SK3891-01R
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
30
20V 10V
8.0V
25
6.5V
20
15
6.0V
10
5
VGS=5.5V
0
0
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
0
0
4
8
12
16
20
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
10
1
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
0.1
0.1
1
10
100
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
1.4
VGS=5.5V
6.0V
1.2
1.0
0.8
6.5V 8.0V 10V
0.6
20V
0.4
0
5
10
15
20
25
30
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
2.00
1.75
1.50
1.25
1.00
max.
0.75
typ.
0.50
0.25
0.00
-50 -25
0
25
50
75 100 125 150
Tch [°C]
2
Share Link: 