2SK3891-01R View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3891-01R Datasheet PDF : 4 Pages
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2SK3891-01R
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
Ciss
103
102
Coss
101
Crss
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25 °C
14
12
Vcc= 140V
10
350V
560V
8
6
4
2
0
0
10
20
30
40
50
60
70
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100
10
1
100
10-1
100
101
102
103
VDS [V]
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Typical Switching Characteristics vs. ID
103 t=f(ID):Vcc=600V,VGS=10V,RG=10Ω
tf
102
td(off)
td(on)
101
tr
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=100V
1200
I =6.8A
AS
1000
800
I =10.2A
AS
600
I =17A
400 AS
200
100
10-1
100
101
ID [A]
0
102
0
25
50
75
100
125
150
starting Tch [°C]
3
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